onsemi Single FETs, MOSFETs FQP11P06

Description
P-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
P-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP11P06-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP11P06-ND
Single FETs, MOSFETs FQP11P06-ND
P-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-220-3

P-Channel 60V 11.4A (Tc) 53W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP11P06 - 204296-FQP11P06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP11P06
204296-FQP11P06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP11P06 204296-FQP11P06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204296-FQP11P06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 53W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 175 mOhm @ 5.7A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204296-FQP11P06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 53W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 175 mOhm @ 5.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore
P-Channel 60V MOSFET Transistor
2088-FQP11P06
P-Channel 60V MOSFET Transistor 2088-FQP11P06
MOSFETs 60V P-Channel QFET Product overview: FQP11P06 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP11P06 can be used for catalog matching and distributor lookup.

MOSFETs 60V P-Channel QFET Product overview: FQP11P06 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQP11P06 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP11P06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP11P06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP11P06
MOSFET P-CH 60V 11.4A TO220-3

MOSFET P-CH 60V 11.4A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FQP11P06
MOSFET FQP11P06
MOSFET 60V P-Channel QFET

MOSFET 60V P-Channel QFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQP11P06-ND 204296-FQP11P06 2088-FQP11P06 FQP11P06 FQP11P06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP11P06 P-Channel 60V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3
V(BR)DSS 60 volts
PD 53000 milliwatts 53 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers
 - AUIRFP4310Z - Rochester Electronics
Specs
Polarity N-Channel
Package Type TO-247; TO-247AC
Packing Method Tube; Tube
View Details
5 suppliers