MOSFET N-CH 400V 10.5A TO220-3
N-Channel 400V 10.5A (Tc) 135W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039819-FQP11N40C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Family Name: FQP11N40C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1090pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V
Alternative Parts (Cross-Reference): KHB011N40P1 ; STP10NA40; IRF740LCLPBF; STP11NB40;
Introduction Date: September 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFET, N CH, 400V, 10.5A, TO-220AB-3, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:400V, CONTINUOUS DRAIN CURRENT ID:10.5A, ON RESISTANCE RDS(ON):0.43OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Channel 400V 10.5A TO220AB
MOSFET N-CH 400V 10.5A TO220-3
MOSFET, N CH, 400V, 10.5A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET 400V N-Channel Advance Q-FET
400V 10.5A 135W 530mΩ@5.25A,10V 4V@250uA null TO-220 MOSFETs ROHS
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Radwell International | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQP11N40C | FQP11N40CFS-ND | 1039819-FQP11N40C | 49272412 | 6715004 | FQP11N40C | 31Y1543 | FQP11N40C | FQP11N40C |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP11N40C | Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 400V, 10.5A, To-220Ab-3; Channel Type Onsemi | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | ||||||
| IDSS | 10500 milliamps | 10500 milliamps | |||||||
| PD | 135000 milliwatts | 135000 milliwatts | 135000 milliwatts |