onsemi FETs - Single - FQP11N40 FQP11N40

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175416-FQP11N40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 147W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 11.4A Rds On (Maximum) at Id, Vgs: 480mOhm at 5.7A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V
  • FETs - Single - FQP11N40 - 1175416-FQP11N40 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP11N40-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP11N40 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 400V 11.4A TO-220 - 598-FQP11N40 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175416-FQP11N40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 147W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 11.4A Rds On (Maximum) at Id, Vgs: 480mOhm at 5.7A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQP11N40 - 1175416-FQP11N40 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQP11N40
1175416-FQP11N40
FETs - Single - FQP11N40 1175416-FQP11N40
Manufacturer: ON Semiconductor Win Source Part Number: 1175416-FQP11N40 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 147W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 11.4A Rds On (Maximum) at Id, Vgs: 480mOhm at 5.7A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175416-FQP11N40
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 147W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 11.4A
Rds On (Maximum) at Id, Vgs: 480mOhm at 5.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
400V 11.4A TO-220 MOSFET Transistor
278-FQP11N40
400V 11.4A TO-220 MOSFET Transistor 278-FQP11N40
MOSFET N-CH 400V 11.4A TO-220 Product overview: FQP11N40 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 11.4A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 11.4A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP11N40 can be used for catalog matching and distributor lookup.

MOSFET N-CH 400V 11.4A TO-220 Product overview: FQP11N40 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 11.4A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 11.4A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP11N40 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP11N40-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP11N40-ND
Single FETs, MOSFETs FQP11N40-ND
N-Channel 400V 11.4A (Tc) 147W (Tc) Through Hole TO-220-3

N-Channel 400V 11.4A (Tc) 147W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP11N40 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP11N40
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP11N40
MOSFET N-CH 400V 11.4A TO220-3

MOSFET N-CH 400V 11.4A TO220-3

Supplier's Site
MOSFET N-CH 400V 11.4A TO-220 - 598-FQP11N40 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 400V 11.4A TO-220
598-FQP11N40
MOSFET N-CH 400V 11.4A TO-220 598-FQP11N40
MOSFET N-CH 400V 11.4A TO-220

MOSFET N-CH 400V 11.4A TO-220

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1175416-FQP11N40 278-FQP11N40 FQP11N40-ND FQP11N40 598-FQP11N40
Product Name FETs - Single - FQP11N40 400V 11.4A TO-220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 400V 11.4A TO-220
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 400 volts 400 volts
PD 147000 milliwatts 147000 milliwatts 147000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
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