onsemi Single FETs, MOSFETs FQNL2N50BTA

Description
N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3
Request a Quote Datasheet
Description
N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - FQNL2N50BTATB-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQNL2N50BTATB-ND
Single FETs, MOSFETs FQNL2N50BTATB-ND
N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3

N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQNL2N50BTA - 105013-FQNL2N50BTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQNL2N50BTA
105013-FQNL2N50BTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQNL2N50BTA 105013-FQNL2N50BTA
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 105013-FQNL2N50BTA Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 Long Body (Formed Leads) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 350mA (Tc) Gate-Source Threshold Voltage: 3.7V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5.3 Ohm @ 175mA, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 105013-FQNL2N50BTA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 Long Body (Formed Leads)
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 350mA (Tc)
Gate-Source Threshold Voltage: 3.7V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5.3 Ohm @ 175mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
MOSFET 500V N-Channel QFET - 598-FQNL2N50BTA - Utmel Electronic Limited
Hong Kong, China
MOSFET 500V N-Channel QFET
598-FQNL2N50BTA
MOSFET 500V N-Channel QFET 598-FQNL2N50BTA
MOSFET 500V N-Channel QFET

MOSFET 500V N-Channel QFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V N-Channel QFET

MOSFET 500V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQNL2N50BTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQNL2N50BTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQNL2N50BTA
MOSFET N-CH 500V 350MA TO92-3

MOSFET N-CH 500V 350MA TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQNL2N50BTATB-ND 105013-FQNL2N50BTA 598-FQNL2N50BTA FQNL2N50BTA FQNL2N50BTA
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQNL2N50BTA MOSFET 500V N-Channel QFET MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; SOT3; TO-92-3 TO-92; TO-226-3, TO-92-3 Long Body (Formed Leads)
V(BR)DSS 500 volts 500 volts
PD 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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