onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQN1N50CTA FQN1N50CTA

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039814-FQN1N50CTA Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 380mA (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.4nC @ 10V Max Input Capacitance: 195pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6 Ohm @ 190mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQN1N50CTA - 1039814-FQN1N50CTA - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQN1N50CTATB-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQN1N50CTACT-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 380 Ma, 500 V, 4.6 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 31Y1533 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQN1N50CTA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039814-FQN1N50CTA Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 380mA (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.4nC @ 10V Max Input Capacitance: 195pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6 Ohm @ 190mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQN1N50CTA - 1039814-FQN1N50CTA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQN1N50CTA
1039814-FQN1N50CTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQN1N50CTA 1039814-FQN1N50CTA
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039814-FQN1N50CTA Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 380mA (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.4nC @ 10V Max Input Capacitance: 195pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6 Ohm @ 190mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039814-FQN1N50CTA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 380mA (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 6.4nC @ 10V
Max Input Capacitance: 195pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6 Ohm @ 190mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQN1N50CTATB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQN1N50CTATB-ND
Single FETs, MOSFETs FQN1N50CTATB-ND
N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3

N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Single FETs, MOSFETs - FQN1N50CTACT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQN1N50CTACT-ND
Single FETs, MOSFETs FQN1N50CTACT-ND
N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3

N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
500V 0.38A 6OHM MOSFET Transistor
2088-FQN1N50CTA
500V 0.38A 6OHM MOSFET Transistor 2088-FQN1N50CTA
MOSFETs N-CH/500V 0.38A/6OHM Product overview: FQN1N50CTA from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 0.38A, 6OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 0.38A, 6OHM, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQN1N50CTA can be used for catalog matching and distributor lookup.

MOSFETs N-CH/500V 0.38A/6OHM Product overview: FQN1N50CTA from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 0.38A, 6OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 0.38A, 6OHM, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQN1N50CTA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQN1N50CTA
MOSFET FQN1N50CTA
MOSFET N-CH/500V 0.38A/6OHM

MOSFET N-CH/500V 0.38A/6OHM

Buy Now Datasheet
Mosfet Transistor, N Channel, 380 Ma, 500 V, 4.6 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 31Y1533 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 380 Ma, 500 V, 4.6 Ohm, 10 V, 4 V Rohs Compliant Onsemi
31Y1533
Mosfet Transistor, N Channel, 380 Ma, 500 V, 4.6 Ohm, 10 V, 4 V Rohs Compliant Onsemi 31Y1533
MOSFET Transistor, N Channel, 380 mA, 500 V, 4.6 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 380 mA, 500 V, 4.6 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQN1N50CTA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQN1N50CTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQN1N50CTA
MOSFET N-CH 500V 380MA TO92-3

MOSFET N-CH 500V 380MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039814-FQN1N50CTA FQN1N50CTATB-ND 2088-FQN1N50CTA FQN1N50CTA 31Y1533 FQN1N50CTA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQN1N50CTA Single FETs, MOSFETs 500V 0.38A 6OHM MOSFET Transistor MOSFET Mosfet Transistor, N Channel, 380 Ma, 500 V, 4.6 Ohm, 10 V, 4 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 890 to 2080 milliwatts 890 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data