onsemi Single FETs, MOSFETs FQI8N60CTU

Description
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)
  • Single FETs, MOSFETs - FQI8N60CTU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI8N60CTU - 040345-FQI8N60CTU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI8N60CTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 7.5A, I2Pak; Channel Type Onsemi - 60J0835 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQI8N60CTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQI8N60CTU-ND
Single FETs, MOSFETs FQI8N60CTU-ND
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)

N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI8N60CTU - 040345-FQI8N60CTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI8N60CTU
040345-FQI8N60CTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI8N60CTU 040345-FQI8N60CTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040345-FQI8N60CTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK (TO-262) Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040345-FQI8N60CTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1255pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI8N60CTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI8N60CTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI8N60CTU
MOSFET N-CH 600V 7.5A I2PAK

MOSFET N-CH 600V 7.5A I2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQI8N60CTU
MOSFET FQI8N60CTU
MOSFET 600V N-Channel Adv Q-FET C-Series

MOSFET 600V N-Channel Adv Q-FET C-Series

Buy Now Datasheet
Mosfet, N-Ch, 600V, 7.5A, I2Pak; Channel Type Onsemi - 60J0835 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 7.5A, I2Pak; Channel Type Onsemi
60J0835
Mosfet, N-Ch, 600V, 7.5A, I2Pak; Channel Type Onsemi 60J0835
MOSFET, N-CH, 600V, 7.5A, I2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 7.5A, I2PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQI8N60CTU-ND 040345-FQI8N60CTU FQI8N60CTU FQI8N60CTU 60J0835
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI8N60CTU Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 7.5A, I2Pak; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK (TO-262) TO-262-3 Long Leads, I2PAK, TO-262AA TO-3
V(BR)DSS 600 volts
PD 3130 to 147000 milliwatts
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