onsemi Single FETs, MOSFETs FQI7N80TU

N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Through Hole I2PAK (TO-262)

800V N-Channel Power MOSFET, 6.6A, 1.5Ω, I2PAK Product overview: FQI7N80TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 6.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI7N80TU can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 730954-FQI7N80TU
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.13W, 167W
Popularity: Low
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 6.6A
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 3.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 52nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1850pF at 25V