onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI7N80 FQI7N80

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040343-FQI7N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1850pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.3A, 10V
Alternative Parts (Cross-Reference): STB7NK80Z-1; IRFBE30L; 2SK2884(Q); FQI7N80;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

MOSFET N-CH 800V 6.6A I2PAK Product overview: FQI7N80 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQI7N80 can be used for catalog matching and distributor lookup.