Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067415-FQI7N60TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1430pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N-Channel 600V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Through Hole I2PAK (TO-262)
MOSFET N-CH 600V 7.4A I2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 067415-FQI7N60TU | FQI7N60TU-ND | FQI7N60TU | FQI7N60TU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI7N60TU | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 3130 to 142000 milliwatts |
