onsemi MOSFET Transistor FQI7N60TU

Description
POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: FQI7N60TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI7N60TU can be used for catalog matching and distributor lookup.
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Description
POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: FQI7N60TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI7N60TU can be used for catalog matching and distributor lookup.
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MOSFET Transistor 278-FQI7N60TU
POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: FQI7N60TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI7N60TU can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: FQI7N60TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI7N60TU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQI7N60TU-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQI7N60TU-ND
Single FETs, MOSFETs FQI7N60TU-ND
N-Channel 600V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Through Hole I2PAK (TO-262)

N-Channel 600V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI7N60TU - 067415-FQI7N60TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI7N60TU
067415-FQI7N60TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI7N60TU 067415-FQI7N60TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067415-FQI7N60TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 142W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK (TO-262) Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1430pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067415-FQI7N60TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1430pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI7N60TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI7N60TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI7N60TU
MOSFET N-CH 600V 7.4A I2PAK

MOSFET N-CH 600V 7.4A I2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V N-Channel QFET

MOSFET 600V N-Channel QFET

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-FQI7N60TU FQI7N60TU-ND 067415-FQI7N60TU FQI7N60TU FQI7N60TU
Product Name MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI7N60TU Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
Transconductance 0.0064 kS
PD 3.13 milliwatts 3130 to 142000 milliwatts
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