onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU FQI5N50TU

Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1139916-FQI5N50TU Power Dissipation: 3.13 W Rise Time: 55 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 4.5 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 1.8 Ω Gate to Source Voltage (Vgs): 30 V
Request a Quote
Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1139916-FQI5N50TU Power Dissipation: 3.13 W Rise Time: 55 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 4.5 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 1.8 Ω Gate to Source Voltage (Vgs): 30 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU - 1139916-FQI5N50TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU
1139916-FQI5N50TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU 1139916-FQI5N50TU
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1139916-FQI5N50TU Power Dissipation: 3.13 W Rise Time: 55 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 4.5 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 1.8 Ω Gate to Source Voltage (Vgs): 30 V

Manufacturer: Fairchild/ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1139916-FQI5N50TU
Power Dissipation: 3.13 W
Rise Time: 55 ns
Fall Time: 35 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 4.5 A
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 25 ns
Drain to Source Resistance: 1.8 Ω
Gate to Source Voltage (Vgs): 30 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1139916-FQI5N50TU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU
Package Type SOT3
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1220250 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT223; Sot-223
View Details
CSD23203W CSD23203W 8 V P-Channel NexFET? Power MOSFET - CSD23203W - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity P-Channel
Package Type WLP 1.0x1.5
View Details
6 suppliers
650V IGBT Transistor - 279-AIGW50N65F5XKSA1 - ERSAELECTRONICS PTE. LTD.
Specs
Transistor Type IGBT
Package Type Tube
View Details
7 suppliers