onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU FQI5N50TU

Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1139916-FQI5N50TU Power Dissipation: 3.13 W Rise Time: 55 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 4.5 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 1.8 Ω Gate to Source Voltage (Vgs): 30 V
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Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1139916-FQI5N50TU Power Dissipation: 3.13 W Rise Time: 55 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 4.5 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 1.8 Ω Gate to Source Voltage (Vgs): 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU - 1139916-FQI5N50TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU
1139916-FQI5N50TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU 1139916-FQI5N50TU
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1139916-FQI5N50TU Power Dissipation: 3.13 W Rise Time: 55 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Operating Temperature: 150 °C Continuous Drain Current (ID): 4.5 A Drain to Source Breakdown Voltage: 500 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 1.8 Ω Gate to Source Voltage (Vgs): 30 V

Manufacturer: Fairchild/ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1139916-FQI5N50TU
Power Dissipation: 3.13 W
Rise Time: 55 ns
Fall Time: 35 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 4.5 A
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 25 ns
Drain to Source Resistance: 1.8 Ω
Gate to Source Voltage (Vgs): 30 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1139916-FQI5N50TU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI5N50TU
Package Type SOT3
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