onsemi N-Channel 900V 4.2A 3.3 Ohm MOSFET Transistor FQI4N90TU

900V N-Channel MOSFET, 4.2A, 3.3 Ohm, I2PAK Product overview: FQI4N90TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 4.2A, 3.3 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 4.2A, 3.3 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI4N90TU can be used for catalog matching and distributor lookup.

N-Channel 900V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Through Hole I2PAK (TO-262)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204295-FQI4N90TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 4.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.3 Ohm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs