onsemi 800V 3.9A MOSFET Transistor FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK Product overview: FQI4N80TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI4N80TU can be used for catalog matching and distributor lookup.

N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175400-FQI4N80TU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Family Name: FQI4N80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 880pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 130W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.6 Ohm @ 1.95A, 10V
Alternative Parts (Cross-Reference): STB5NA80-1; STB4NC80Z-1; IRFBE30L;
Introduction Date: September 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs