onsemi Single FETs, MOSFETs FQI47P06TU

P-Channel 60V 47A (Tc) 3.75W (Ta), 160W (Tc) Through Hole I2PAK (TO-262)

Trans MOSFET P-CH 60V 47A 3-Pin(3+Tab) I2PAK Rail Product overview: FQI47P06TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI47P06TU can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 802701-FQI47P06TU
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60V
Part Status: Obsolete (End Of Life)
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.75W , 160W (Tc)
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 26mOhm at 23.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3600pF at 25V
Current - Continuous Drain (Id) at 25°C: 47A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±25V