onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FQI3P50TU

Description
Manufacturer: onsemi Win Source Part Number: 1323959-FQI3P50TU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 1,000 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W, 85W (Tc) Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA ECCN: EAR99 Fake Threat In the Open Market: 68 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: FQI3 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323959-FQI3P50TU - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQI3P50TU-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI3P50TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: onsemi Win Source Part Number: 1323959-FQI3P50TU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 1,000 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W, 85W (Tc) Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA ECCN: EAR99 Fake Threat In the Open Market: 68 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: FQI3 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Suppliers

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Product
Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323959-FQI3P50TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323959-FQI3P50TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323959-FQI3P50TU
Manufacturer: onsemi Win Source Part Number: 1323959-FQI3P50TU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 1,000 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W, 85W (Tc) Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA ECCN: EAR99 Fake Threat In the Open Market: 68 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: FQI3 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: onsemi
Win Source Part Number: 1323959-FQI3P50TU
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 1,000
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W, 85W (Tc)
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN: EAR99
Fake Threat In the Open Market: 68
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: FQI3
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Single FETs, MOSFETs - FQI3P50TU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQI3P50TU-ND
Single FETs, MOSFETs FQI3P50TU-ND
P-Channel 500V 2.7A (Tc) 3.13W (Ta), 85W (Tc) Through Hole I2PAK (TO-262)

P-Channel 500V 2.7A (Tc) 3.13W (Ta), 85W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI3P50TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI3P50TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI3P50TU
MOSFET P-CH 500V 2.7A I2PAK

MOSFET P-CH 500V 2.7A I2PAK

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1323959-FQI3P50TU FQI3P50TU-ND FQI3P50TU
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
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