onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI3N90 FQI3N90

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 092769-FQI3N90
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 910pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.25 Ohm @ 1.8A, 10V
Alternative Parts (Cross-Reference): FQI3N90TU; STB3NC90Z-1; 2SK1867; FQI3N90;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

MOSFET N-CH 900V 3.6A I2PAK Product overview: FQI3N90 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 3.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQI3N90 can be used for catalog matching and distributor lookup.