Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040339-FQI13N50CTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 195W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 2055pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 480 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
N-Channel 500V 13A (Tc) 195W (Tc) Through Hole I2PAK (TO-262)
MOSFET N-CH 500V 13A I2PAK
MOSFET N-CH 500V 13A I2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 040339-FQI13N50CTU | FQI13N50CTU-ND | FQI13N50CTU | FQI13N50CTU | 598-FQI13N50CTU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI13N50CTU | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 500V 13A I2PAK |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | |||
| PD | 195000 milliwatts | 195000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; I2PAK | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA |
