onsemi 600V 10.5A MOSFET Transistor FQI12N60TU

MOSFET N-CH 600V 10.5A I2PAK Product overview: FQI12N60TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI12N60TU can be used for catalog matching and distributor lookup.

N-Channel 600V 10.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole I2PAK (TO-262)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774737-FQI12N60TU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQI12N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 180W (Tc)
Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 5.3A, 10V
Alternative Parts (Cross-Reference): SPI08N50C3XK; STI10N62K3; STB9NB60-1; SPI08N50C3;
Introduction Date: May 16, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited