onsemi Single FETs, MOSFETs FQH18N50V2

Description
N-Channel 500V 20A (Tc) 277W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 500V 20A (Tc) 277W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQH18N50V2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQH18N50V2-ND
Single FETs, MOSFETs FQH18N50V2-ND
N-Channel 500V 20A (Tc) 277W (Tc) Through Hole TO-247-3

N-Channel 500V 20A (Tc) 277W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQH18N50V2 - 204293-FQH18N50V2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQH18N50V2
204293-FQH18N50V2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQH18N50V2 204293-FQH18N50V2
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204293-FQH18N50V2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 277W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 3290pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 265 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204293-FQH18N50V2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 277W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3290pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 265 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
MOSFET N-CH 500V 20A TO-247 - 598-FQH18N50V2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 20A TO-247
598-FQH18N50V2
MOSFET N-CH 500V 20A TO-247 598-FQH18N50V2
MOSFET N-CH 500V 20A TO-247

MOSFET N-CH 500V 20A TO-247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQH18N50V2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQH18N50V2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQH18N50V2
MOSFET N-CH 500V 20A TO247-3

MOSFET N-CH 500V 20A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQH18N50V2-ND 204293-FQH18N50V2 598-FQH18N50V2 FQH18N50V2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQH18N50V2 MOSFET N-CH 500V 20A TO-247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-247; TO-247-3
V(BR)DSS 500 volts
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