N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
N-Channel MOSFET, 250V, 7.4A, 420mR, DPAK, SM Product overview: FQD9N25TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 7.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 7.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD9N25TM can be used for catalog matching and distributor lookup.
MOSFET N-CH 250V 7.4A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016446-FQD9N25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 7.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 420 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET, N-CH, 250V, 7.4A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:7.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET N-CH 250V 7.4A DPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQD9N25TMTR-ND | 278-FQD9N25TM | FQD9N25TM | 016446-FQD9N25TM | 31Y1532 | FQD9N25TM | FQD9N25TM |
| Product Name | Single FETs, MOSFETs | N-Channel 250V 7.4A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD9N25TM | Mosfet, N-Ch, 250V, 7.4A, To-252Aa-3; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-3 | 700 pF @ 25 V | ||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 to 55000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
