MOSFETs 100V P-Channel QFET Product overview: FQD8P10TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD8P10TM can be used for catalog matching and distributor lookup.
MOSFET P-CH 100V 6.6A DPAK
P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016445-FQD8P10TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Family Name: FQD8P10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 530 mOhm @ 3.3A, 10V
Alternative Parts (Cross-Reference): IRFR9120TRPBF; IRFR9120TRLPBF; IRFR9120TRL;
Introduction Date: August 01, 2000
ECCN: EAR99
Country of Origin: China\Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET P-CH 100V 6.6A DPAK
MOSFET, P-CH, -100V, -6.6A, TO-252AA-3; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FQD8P10TM | 6711043 | 6711043P | FQD8P10TM | FQD8P10TMDKR-ND | 016445-FQD8P10TM | FQD8P10TM | 31Y1531 |
| Product Name | P-Channel 100V MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD8P10TM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -100V, -6.6A, To-252Aa-3; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| Transconductance | 0.0041 kS | |||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 to 44000 milliwatts | |||||
| Package Type | Reel | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | Surface Mount | TO-3 |
