MOSFET P-CH 200V 5.7A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067412-FQD7P20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Family Name: FQD7P20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 770pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 690 mOhm @ 2.85A, 10V
Alternative Parts (Cross-Reference): 7P20G-TN3-R; 7P20L-TN3-R; 2SJ338(TE16R1,NQ); 2SJ338;
Introduction Date: April 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
P-Channel 200V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
P-Channel 200V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
P-Channel 200V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
P CHANNEL MOSFET, -200V 5.7mA D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.7mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET, N-CH, -200V, -5.7A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes
P CHANNEL MOSFET, -200V 5.7mA D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.7mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET P-CH 200V 5.7A DPAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQD7P20TM | 067412-FQD7P20TM | FQD7P20TMCT-ND | 6711034 | 6711034P | 15R4038 | 84Y5843 | FQD7P20TM | FQD7P20TM |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P20TM | Single FETs, MOSFETs | MOSFETs | MOSFETs | P Channel Mosfet, -200V 5.7Ma D-Pak; Channel Type Onsemi | Mosfet, N-Ch, -200V, -5.7A, To-252-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 200 volts | 200 volts | |||||||
| IDSS | 5700 milliamps | 5.7 milliamps | -5700 milliamps | ||||||
| PD | 2500 milliwatts | 2500 to 55000 milliwatts |
