onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM FQD7P06TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067411-FQD7P06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 451 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM - 067411-FQD7P06TM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQD7P06TMTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQD7P06TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7P06TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi - 46AC0860 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067411-FQD7P06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 451 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM - 067411-FQD7P06TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM
067411-FQD7P06TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM 067411-FQD7P06TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067411-FQD7P06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 451 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067411-FQD7P06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 295pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 451 mOhm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD7P06TMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD7P06TMTR-ND
Single FETs, MOSFETs FQD7P06TMTR-ND
P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FQD7P06TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD7P06TM
Single FETs, MOSFETs FQD7P06TM
MOSFET P-CH 60V 5.4A DPAK

MOSFET P-CH 60V 5.4A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7P06TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD7P06TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD7P06TM
MOSFET P-CH 60V 5.4A DPAK

MOSFET P-CH 60V 5.4A DPAK

Supplier's Site
Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi - 46AC0860 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi
46AC0860
Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi 46AC0860
MOSFET, P-CH, -60V, -5.4A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-5.4A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-4V; Power Dissipation:28W; No. of Pins:3PinsRoHS Compliant: Yes

MOSFET, P-CH, -60V, -5.4A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-5.4A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-4V; Power Dissipation:28W; No. of Pins:3PinsRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067411-FQD7P06TM FQD7P06TMTR-ND FQD7P06TM FQD7P06TM 46AC0860
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts
PD 2500 to 28000 milliwatts 2500 milliwatts 28000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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