onsemi Single FETs, MOSFETs FQD7P06TM

Description
P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD7P06TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD7P06TMTR-ND
Single FETs, MOSFETs FQD7P06TMTR-ND
P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM - 067411-FQD7P06TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM
067411-FQD7P06TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM 067411-FQD7P06TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067411-FQD7P06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 451 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067411-FQD7P06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 295pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 451 mOhm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Singapore
P-Channel 60V MOSFET Transistor
2088-FQD7P06TM
P-Channel 60V MOSFET Transistor 2088-FQD7P06TM
MOSFETs 60V P-Channel QFET Product overview: FQD7P06TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD7P06TM can be used for catalog matching and distributor lookup.

MOSFETs 60V P-Channel QFET Product overview: FQD7P06TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD7P06TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD7P06TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD7P06TM
Single FETs, MOSFETs FQD7P06TM
MOSFET P-CH 60V 5.4A DPAK

MOSFET P-CH 60V 5.4A DPAK

Supplier's Site Datasheet
Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi - 46AC0860 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi
46AC0860
Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi 46AC0860
MOSFET, P-CH, -60V, -5.4A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-5.4A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-4V; Power Dissipation:28W; No. of Pins:3PinsRoHS Compliant: Yes

MOSFET, P-CH, -60V, -5.4A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-5.4A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-4V; Power Dissipation:28W; No. of Pins:3PinsRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7P06TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD7P06TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD7P06TM
MOSFET P-CH 60V 5.4A DPAK

MOSFET P-CH 60V 5.4A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQD7P06TMTR-ND 067411-FQD7P06TM 2088-FQD7P06TM FQD7P06TM 46AC0860 FQD7P06TM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM P-Channel 60V MOSFET Transistor Single FETs, MOSFETs Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak Reel TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 60 volts 60 volts
PD 2500 to 28000 milliwatts 2.5 milliwatts 2500 milliwatts 28000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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