P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
MOSFETs 60V P-Channel QFET Product overview: FQD7P06TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD7P06TM can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 5.4A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067411-FQD7P06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 295pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 451 mOhm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET P-CH 60V 5.4A DPAK
MOSFET, P-CH, -60V, -5.4A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-5.4A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-4V; Power Dissipation:28W; No. of Pins:3PinsRoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQD7P06TMTR-ND | 2088-FQD7P06TM | FQD7P06TM | 067411-FQD7P06TM | FQD7P06TM | 46AC0860 |
| Product Name | Single FETs, MOSFETs | P-Channel 60V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7P06TM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -60V, -5.4A, To-252-3; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Reel | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0038 kS | |||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 to 28000 milliwatts | 28000 milliwatts |
