onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N30TF FQD7N30TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039775-FQD7N30TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039775-FQD7N30TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N30TF - 1039775-FQD7N30TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N30TF
1039775-FQD7N30TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N30TF 1039775-FQD7N30TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039775-FQD7N30TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 5.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 2.75A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039775-FQD7N30TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 610pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 700 mOhm @ 2.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQD7N30TF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD7N30TF-ND
Single FETs, MOSFETs FQD7N30TF-ND
N-Channel 300V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 300V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7N30TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD7N30TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD7N30TF
MOSFET N-CH 300V 5.5A DPAK

MOSFET N-CH 300V 5.5A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1039775-FQD7N30TF FQD7N30TF-ND FQD7N30TF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N30TF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts
PD 2500 to 50000 milliwatts
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