onsemi Single FETs, MOSFETs FQD7N10LTM

Description
MOSFET N-CH 100V 5.8A DPAK
  • Single FETs, MOSFETs - FQD7N10LTM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTM - 016443-FQD7N10LTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQD7N10LTMTR-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 5.8 A, 100 V, 0.275 Ohm, 10 V, 2 V Rohs Compliant Onsemi - 31Y1530 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7N10LTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 100V 5.8A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD7N10LTM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD7N10LTM
Single FETs, MOSFETs FQD7N10LTM
MOSFET N-CH 100V 5.8A DPAK

MOSFET N-CH 100V 5.8A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTM - 016443-FQD7N10LTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTM
016443-FQD7N10LTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTM 016443-FQD7N10LTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016443-FQD7N10LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016443-FQD7N10LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6nC @ 5V
Max Input Capacitance: 290pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 100V 5.8A DPAK MOSFET Transistor
278-FQD7N10LTM
N-Channel 100V 5.8A DPAK MOSFET Transistor 278-FQD7N10LTM
N-Channel MOSFET, 100V, 5.8A, 350mR, Logic Level, DPAK Product overview: FQD7N10LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 5.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD7N10LTM can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 100V, 5.8A, 350mR, Logic Level, DPAK Product overview: FQD7N10LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 5.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD7N10LTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD7N10LTMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD7N10LTMTR-ND
Single FETs, MOSFETs FQD7N10LTMTR-ND
N-Channel 100V 5.8A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA

N-Channel 100V 5.8A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Mosfet Transistor, N Channel, 5.8 A, 100 V, 0.275 Ohm, 10 V, 2 V Rohs Compliant Onsemi - 31Y1530 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 5.8 A, 100 V, 0.275 Ohm, 10 V, 2 V Rohs Compliant Onsemi
31Y1530
Mosfet Transistor, N Channel, 5.8 A, 100 V, 0.275 Ohm, 10 V, 2 V Rohs Compliant Onsemi 31Y1530
MOSFET Transistor, N Channel, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7N10LTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD7N10LTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD7N10LTM
MOSFET N-CH 100V 5.8A DPAK

MOSFET N-CH 100V 5.8A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQD7N10LTM
MOSFET FQD7N10LTM
MOSFET 100V N-Ch QFET Logic Level

MOSFET 100V N-Ch QFET Logic Level

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQD7N10LTM 016443-FQD7N10LTM 278-FQD7N10LTM FQD7N10LTMTR-ND 31Y1530 FQD7N10LTM FQD7N10LTM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTM N-Channel 100V 5.8A DPAK MOSFET Transistor Single FETs, MOSFETs Mosfet Transistor, N Channel, 5.8 A, 100 V, 0.275 Ohm, 10 V, 2 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 5800 milliamps
Unlock Full Specs
to access all available technical data