onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF FQD7N10LTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039772-FQD7N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting, Industrial
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039772-FQD7N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF - 1039772-FQD7N10LTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF
1039772-FQD7N10LTF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF 1039772-FQD7N10LTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039772-FQD7N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039772-FQD7N10LTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6nC @ 5V
Max Input Capacitance: 290pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Lighting, Industrial

Buy Now Datasheet
Singapore
100V 5.8A DPAK MOSFET Transistor
278-FQD7N10LTF
100V 5.8A DPAK MOSFET Transistor 278-FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAK Product overview: FQD7N10LTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD7N10LTF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 5.8A DPAK Product overview: FQD7N10LTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD7N10LTF can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7N10LTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD7N10LTF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAK

MOSFET N-CH 100V 5.8A DPAK

Supplier's Site
MOSFET N-CH 100V 5.8A DPAK - 598-FQD7N10LTF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 5.8A DPAK
598-FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAK 598-FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAK

MOSFET N-CH 100V 5.8A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039772-FQD7N10LTF 278-FQD7N10LTF FQD7N10LTF 598-FQD7N10LTF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF 100V 5.8A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 100V 5.8A DPAK
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 2500 to 25000 milliwatts 25000 milliwatts 2500 milliwatts
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4 suppliers