onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF FQD7N10LTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039772-FQD7N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting, Industrial
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039772-FQD7N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF - 1039772-FQD7N10LTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF
1039772-FQD7N10LTF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF 1039772-FQD7N10LTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039772-FQD7N10LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Lighting, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039772-FQD7N10LTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6nC @ 5V
Max Input Capacitance: 290pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Lighting, Industrial

Buy Now Datasheet
MOSFET N-CH 100V 5.8A DPAK - 598-FQD7N10LTF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 5.8A DPAK
598-FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAK 598-FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAK

MOSFET N-CH 100V 5.8A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD7N10LTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD7N10LTF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAK

MOSFET N-CH 100V 5.8A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039772-FQD7N10LTF 598-FQD7N10LTF FQD7N10LTF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD7N10LTF MOSFET N-CH 100V 5.8A DPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 2500 to 25000 milliwatts 2500 milliwatts
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