onsemi Single FETs, MOSFETs FQD6P25TM

Description
P-Channel 250V 4.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
P-Channel 250V 4.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - FQD6P25TM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD6P25TM-ND
Single FETs, MOSFETs FQD6P25TM-ND
P-Channel 250V 4.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA

P-Channel 250V 4.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD6P25TM - 138806-FQD6P25TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD6P25TM
138806-FQD6P25TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD6P25TM 138806-FQD6P25TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 138806-FQD6P25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.35A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 138806-FQD6P25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 4.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD6P25TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD6P25TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD6P25TM
MOSFET P-CH 250V 4.7A DPAK

MOSFET P-CH 250V 4.7A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQD6P25TM-ND 138806-FQD6P25TM FQD6P25TM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD6P25TM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 250 volts
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