onsemi Single FETs, MOSFETs FQD630TF

Description
N-Channel 200V 7A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount TO-252AA
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Description
N-Channel 200V 7A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

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Description
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Single FETs, MOSFETs - FQD630TF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD630TF-ND
Single FETs, MOSFETs FQD630TF-ND
N-Channel 200V 7A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount TO-252AA

N-Channel 200V 7A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD630TF - 1039763-FQD630TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD630TF
1039763-FQD630TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD630TF 1039763-FQD630TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039763-FQD630TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039763-FQD630TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD630TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD630TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD630TF
MOSFET N-CH 200V 7A DPAK

MOSFET N-CH 200V 7A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQD630TF-ND 1039763-FQD630TF FQD630TF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD630TF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 200 volts
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