MOSFET P-CH 200V 3.7A DPAK
POWER FIELD-EFFECT TRANSISTOR, 3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039762-FQD5P20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 430pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.85A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
MOSFET P-CH 200V 3.7A DPAK
MOSFET Transistor, P Channel, -3.7 A, -200 V, 1.1 ohm, -10 V, -3 V RoHS Compliant: Yes
MOSFET, P CHANNEL, -200V, 1.1OHM, -3.7A, TO-252-3; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.7A; On Resistance Rds(on):1.1ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQD5P20TM | 1039762-FQD5P20TM | FQD5P20TMCT-ND | FQD5P20TM | 95W3216 | 84W8883 | FQD5P20TM |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5P20TM | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, -3.7 A, -200 V, 1.1 Ohm, -10 V, -3 V Rohs Compliant Onsemi | Mosfet, P Channel, -200V, 1.1Ohm, -3.7A, To-252-3; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| IDSS | 3700 milliamps | 3700 milliamps | |||||
| PD | 2500 milliwatts | 2500 to 45000 milliwatts |
