onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5P10TM FQD5P10TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039761-FQD5P10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5P10TM - 1039761-FQD5P10TM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQD5P10TMFSTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQD5P10TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD5P10TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, P Channel, -3.6 A, -100 V, 0.82 Ohm, -10 V, -2 V Rohs Compliant Onsemi - 95W3215 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, P Channel, -100V, 0.82Ohm, -3.6A, To-252-3; Transistor Polarity Onsemi - 84W8882 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039761-FQD5P10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5P10TM - 1039761-FQD5P10TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5P10TM
1039761-FQD5P10TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5P10TM 1039761-FQD5P10TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039761-FQD5P10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039761-FQD5P10TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD5P10TMFSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD5P10TMFSTR-ND
Single FETs, MOSFETs FQD5P10TMFSTR-ND
P-Channel 100V 3.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA

P-Channel 100V 3.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FQD5P10TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD5P10TM
Single FETs, MOSFETs FQD5P10TM
MOSFET P-CH 100V 3.6A DPAK

MOSFET P-CH 100V 3.6A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD5P10TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD5P10TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD5P10TM
MOSFET P-CH 100V 3.6A DPAK

MOSFET P-CH 100V 3.6A DPAK

Supplier's Site
Mosfet Transistor, P Channel, -3.6 A, -100 V, 0.82 Ohm, -10 V, -2 V Rohs Compliant Onsemi - 95W3215 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -3.6 A, -100 V, 0.82 Ohm, -10 V, -2 V Rohs Compliant Onsemi
95W3215
Mosfet Transistor, P Channel, -3.6 A, -100 V, 0.82 Ohm, -10 V, -2 V Rohs Compliant Onsemi 95W3215
MOSFET Transistor, P Channel, -3.6 A, -100 V, 0.82 ohm, -10 V, -2 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -3.6 A, -100 V, 0.82 ohm, -10 V, -2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -100V, 0.82Ohm, -3.6A, To-252-3; Transistor Polarity Onsemi - 84W8882 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -100V, 0.82Ohm, -3.6A, To-252-3; Transistor Polarity Onsemi
84W8882
Mosfet, P Channel, -100V, 0.82Ohm, -3.6A, To-252-3; Transistor Polarity Onsemi 84W8882
MOSFET, P CHANNEL, -100V, 0.82OHM, -3.6A, TO-252-3; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3.6A; On Resistance Rds(on):0.82ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, P CHANNEL, -100V, 0.82OHM, -3.6A, TO-252-3; Transistor Polarity:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3.6A; On Resistance Rds(on):0.82ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQD5P10TM
MOSFET FQD5P10TM
MOSFET 100V P-Channel QFET

MOSFET 100V P-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039761-FQD5P10TM FQD5P10TMFSTR-ND FQD5P10TM FQD5P10TM 95W3215 84W8882 FQD5P10TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5P10TM Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, -3.6 A, -100 V, 0.82 Ohm, -10 V, -2 V Rohs Compliant Onsemi Mosfet, P Channel, -100V, 0.82Ohm, -3.6A, To-252-3; Transistor Polarity Onsemi MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 100 volts 100 volts
PD 2500 to 25000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-3
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