onsemi Single FETs, MOSFETs FQD5N60CTM

N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount TO-252AA

N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount TO-252AA

N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount TO-252AA

MOSFETs 600V N-Channel Adv Q-FET C-Series Product overview: FQD5N60CTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD5N60CTM can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 2.8A DPAK

POWER FIELD-EFFECT TRANSISTOR, 2

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 113912-FQD5N60CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500