onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N60CTF FQD5N60CTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039760-FQD5N60CTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039760-FQD5N60CTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N60CTF - 1039760-FQD5N60CTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N60CTF
1039760-FQD5N60CTF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N60CTF 1039760-FQD5N60CTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039760-FQD5N60CTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039760-FQD5N60CTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQD5N60CTF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD5N60CTF-ND
Single FETs, MOSFETs FQD5N60CTF-ND
N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount TO-252AA

N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD5N60CTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD5N60CTF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD5N60CTF
MOSFET N-CH 600V 2.8A DPAK

MOSFET N-CH 600V 2.8A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1039760-FQD5N60CTF FQD5N60CTF-ND FQD5N60CTF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N60CTF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 2500 to 49000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRF3808S - ODG (Origin Data Global)
Infineon Technologies AG
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 75 volts
View Details
5 suppliers
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1317T - 855026-2SA1317T - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details