onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N20LTM FQD5N20LTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016439-FQD5N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.2nC @ 5V Max Input Capacitance: 325pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N20LTM - 016439-FQD5N20LTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQD5N20LTMTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQD5N20LTM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 200V, 3.8A, To-252; Transistor Polarity Onsemi - 07AH3997 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD5N20LTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016439-FQD5N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.2nC @ 5V Max Input Capacitance: 325pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N20LTM - 016439-FQD5N20LTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N20LTM
016439-FQD5N20LTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N20LTM 016439-FQD5N20LTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016439-FQD5N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6.2nC @ 5V Max Input Capacitance: 325pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016439-FQD5N20LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.2nC @ 5V
Max Input Capacitance: 325pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD5N20LTMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD5N20LTMTR-ND
Single FETs, MOSFETs FQD5N20LTMTR-ND
N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount TO-252AA

N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FQD5N20LTM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD5N20LTM
Single FETs, MOSFETs FQD5N20LTM
MOSFET N-CH 200V 3.8A DPAK

MOSFET N-CH 200V 3.8A DPAK

Supplier's Site Datasheet
Mosfet, N-Ch, 200V, 3.8A, To-252; Transistor Polarity Onsemi - 07AH3997 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 3.8A, To-252; Transistor Polarity Onsemi
07AH3997
Mosfet, N-Ch, 200V, 3.8A, To-252; Transistor Polarity Onsemi 07AH3997
MOSFET, N-CH, 200V, 3.8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.94ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 200V, 3.8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.94ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD5N20LTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD5N20LTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD5N20LTM
MOSFET N-CH 200V 3.8A DPAK

MOSFET N-CH 200V 3.8A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQD5N20LTM
MOSFET FQD5N20LTM
MOSFET 200V N-Ch QFET Logic Level

MOSFET 200V N-Ch QFET Logic Level

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016439-FQD5N20LTM FQD5N20LTMTR-ND FQD5N20LTM 07AH3997 FQD5N20LTM FQD5N20LTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD5N20LTM Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 200V, 3.8A, To-252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 2500 to 37000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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