onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4P25TM_WS FQD4P25TM_WS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 100472-FQD4P25TM_WS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1.55A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 100472-FQD4P25TM_WS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1.55A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4P25TM_WS - 100472-FQD4P25TM_WS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4P25TM_WS
100472-FQD4P25TM_WS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4P25TM_WS 100472-FQD4P25TM_WS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 100472-FQD4P25TM_WS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1.55A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 100472-FQD4P25TM_WS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 420pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1.55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
250V 3.1A DPAK MOSFET Transistor
285-FQD4P25TM_WS
250V 3.1A DPAK MOSFET Transistor 285-FQD4P25TM_WS
MOSFET P-CH 250V 3.1A DPAK Product overview: FQD4P25TM_WS from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 3.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 3.1A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQD4P25TM_WS can be used for catalog matching and distributor lookup.

MOSFET P-CH 250V 3.1A DPAK Product overview: FQD4P25TM_WS from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 3.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 3.1A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQD4P25TM_WS can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 100472-FQD4P25TM_WS 285-FQD4P25TM_WS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4P25TM_WS 250V 3.1A DPAK MOSFET Transistor
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 250 volts
PD 2500 to 45000 milliwatts 2500 milliwatts
Unlock Full Specs
to access all available technical data