onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TF FQD4N50TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039748-FQD4N50TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039748-FQD4N50TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TF - 1039748-FQD4N50TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TF
1039748-FQD4N50TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TF 1039748-FQD4N50TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039748-FQD4N50TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039748-FQD4N50TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FQD4N50TF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD4N50TF-ND
Single FETs, MOSFETs FQD4N50TF-ND
N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Transistor - 128101242 - Radwell International
Willingboro, NJ, United States
Transistor
128101242
Transistor 128101242
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2.6A I(D), 500V, 2.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2.6A I(D), 500V, 2.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD4N50TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD4N50TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD4N50TF
MOSFET N-CH 500V 2.6A DPAK

MOSFET N-CH 500V 2.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors
Product Number 1039748-FQD4N50TF FQD4N50TF-ND 128101242 FQD4N50TF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TF Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 2500 to 45000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor - TGF2979-SM - Qorvo
Specs
Transistor Technology / Material DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers
GaAs Fet Switches - KCB820 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 6000 MHz
View Details
Single FETs, MOSFETs - AUIRF1405ZS-7P-ND - DigiKey
Specs
Polarity N-Channel
Package Type TO-263; TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Transistor Grade / Operating Range Automotive
View Details
4 suppliers