onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N25TM FQD4N25TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 32484-FQD4N25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 5.6nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.75 Ohm @ 1.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 32484-FQD4N25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 5.6nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.75 Ohm @ 1.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N25TM - 32484-FQD4N25TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N25TM
32484-FQD4N25TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N25TM 32484-FQD4N25TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 32484-FQD4N25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 5.6nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.75 Ohm @ 1.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 32484-FQD4N25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 5.6nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.75 Ohm @ 1.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
250V 3A DPAK MOSFET Transistor
278-FQD4N25TM
250V 3A DPAK MOSFET Transistor 278-FQD4N25TM
MOSFET N-CH 250V 3A DPAK Product overview: FQD4N25TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD4N25TM can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 3A DPAK Product overview: FQD4N25TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD4N25TM can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD4N25TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD4N25TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD4N25TM
MOSFET N-CH 250V 3A DPAK

MOSFET N-CH 250V 3A DPAK

Supplier's Site
MOSFET N-CH 250V 3A DPAK - 598-FQD4N25TM - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 250V 3A DPAK
598-FQD4N25TM
MOSFET N-CH 250V 3A DPAK 598-FQD4N25TM
MOSFET N-CH 250V 3A DPAK

MOSFET N-CH 250V 3A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 32484-FQD4N25TM 278-FQD4N25TM FQD4N25TM 598-FQD4N25TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N25TM 250V 3A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 250V 3A DPAK
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts 250 volts
PD 2500 to 37000 milliwatts 37000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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3 suppliers