onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N20TM FQD4N20TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039744-FQD4N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.5nC @ 10V Max Input Capacitance: 220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039744-FQD4N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.5nC @ 10V Max Input Capacitance: 220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N20TM - 1039744-FQD4N20TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N20TM
1039744-FQD4N20TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N20TM 1039744-FQD4N20TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039744-FQD4N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6.5nC @ 10V Max Input Capacitance: 220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039744-FQD4N20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6.5nC @ 10V
Max Input Capacitance: 220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD4N20TMFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD4N20TMFSTR-ND
Single FETs, MOSFETs FQD4N20TMFSTR-ND
N-Channel 200V 3A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252AA

N-Channel 200V 3A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Transistor,mosfet,n-Channel,200V V(Br)Dss,3A I(D),to-252Aa Rohs Compliant Onsemi - 20C4435 - Newark, An Avnet Company
Chicago, IL, United States
Transistor,mosfet,n-Channel,200V V(Br)Dss,3A I(D),to-252Aa Rohs Compliant Onsemi
20C4435
Transistor,mosfet,n-Channel,200V V(Br)Dss,3A I(D),to-252Aa Rohs Compliant Onsemi 20C4435
TRANSISTOR,MOSFET,N- CHANNEL,200V V(BR)DSS,3A I(D),TO-252AA ROHS COMPLIANT: YES

TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,3A I(D),TO-252AA ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V N-Ch QFET Logic Level

MOSFET 200V N-Ch QFET Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD4N20TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD4N20TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD4N20TM
MOSFET N-CH 200V 3A DPAK

MOSFET N-CH 200V 3A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039744-FQD4N20TM FQD4N20TMFSTR-ND 20C4435 FQD4N20TM FQD4N20TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N20TM Single FETs, MOSFETs Transistor,mosfet,n-Channel,200V V(Br)Dss,3A I(D),to-252Aa Rohs Compliant Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 200 volts
PD 2500 to 30000 milliwatts
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