Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016436-FQD3P50TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Family Name: FQD3P50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.1A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 660pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.9 Ohm @ 1.05A, 10V
Alternative Parts (Cross-Reference): 4P50HG-TN3-R; 4P50HL-TN3-R; 4P50G-TN3-R; STD3PK50Z;
Introduction Date: August 01, 2000
ECCN: EAR99
Country of Origin: China, Malaysia, Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET P-CH 500V 2.1A DPAK
P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
P-Channel 500V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
MOSFET, P-CHANNEL, -500V, -2.1A, TO252-3; Channel Type:P Channel; Drain Source Voltage Vds:-500V; Continuous Drain Current Id:-2.1A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-5V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET P-CH 500V 2.1A DPAK
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016436-FQD3P50TM | FQD3P50TM | 8089010P | 8089010 | FQD3P50TMDKR-ND | FQD3P50TM | 84Y9966 | FQD3P50TM |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P50TM | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P-Channel, -500V, -2.1A, To252-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | ||||||
| PD | 2500 to 50000 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
