Manufacturer: ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 968800-FQD3P50TM_F08
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Input Capacitance: 660 pF
Power Dissipation: 2.5 W
Weight: 260.37 mg
Resistance: 4.9 Ω
Number of Pins: 3
Rise Time: 56 ns
Fall Time: 45 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: DPAK
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 2.5 W
Turn-On Delay Time: 12 ns
Continuous Drain Current (ID): 2.1 A
Drain to Source Breakdown Voltage: -500 V
Turn-Off Delay Time: 35 ns
Drain to Source Resistance: 4.9 Ω
Gate to Source Voltage (Vgs): 30 V
Rds On Max: 4.9 Ω
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 968800-FQD3P50TM_F085 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P50TM_F085 |
| V(BR)DSS | -500 volts |