onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P50TM_F085 FQD3P50TM_F085

Description
Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 968800-FQD3P50TM_F08 5 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 660 pF Power Dissipation: 2.5 W Weight: 260.37 mg Resistance: 4.9 Ω Number of Pins: 3 Rise Time: 56 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Popularity: Low Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 12 ns Continuous Drain Current (ID): 2.1 A Drain to Source Breakdown Voltage: -500 V Turn-Off Delay Time: 35 ns Drain to Source Resistance: 4.9 Ω Gate to Source Voltage (Vgs): 30 V Rds On Max: 4.9 Ω
Request a Quote
Description
Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 968800-FQD3P50TM_F08 5 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 660 pF Power Dissipation: 2.5 W Weight: 260.37 mg Resistance: 4.9 Ω Number of Pins: 3 Rise Time: 56 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Popularity: Low Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 12 ns Continuous Drain Current (ID): 2.1 A Drain to Source Breakdown Voltage: -500 V Turn-Off Delay Time: 35 ns Drain to Source Resistance: 4.9 Ω Gate to Source Voltage (Vgs): 30 V Rds On Max: 4.9 Ω
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P50TM_F085 - 968800-FQD3P50TM_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P50TM_F085
968800-FQD3P50TM_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P50TM_F085 968800-FQD3P50TM_F085
Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 968800-FQD3P50TM_F08 5 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 500 V Number of Elements: 1 Input Capacitance: 660 pF Power Dissipation: 2.5 W Weight: 260.37 mg Resistance: 4.9 Ω Number of Pins: 3 Rise Time: 56 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Popularity: Low Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 12 ns Continuous Drain Current (ID): 2.1 A Drain to Source Breakdown Voltage: -500 V Turn-Off Delay Time: 35 ns Drain to Source Resistance: 4.9 Ω Gate to Source Voltage (Vgs): 30 V Rds On Max: 4.9 Ω

Manufacturer: ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 968800-FQD3P50TM_F085
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Input Capacitance: 660 pF
Power Dissipation: 2.5 W
Weight: 260.37 mg
Resistance: 4.9 Ω
Number of Pins: 3
Rise Time: 56 ns
Fall Time: 45 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: DPAK
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 2.5 W
Turn-On Delay Time: 12 ns
Continuous Drain Current (ID): 2.1 A
Drain to Source Breakdown Voltage: -500 V
Turn-Off Delay Time: 35 ns
Drain to Source Resistance: 4.9 Ω
Gate to Source Voltage (Vgs): 30 V
Rds On Max: 4.9 Ω

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 968800-FQD3P50TM_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P50TM_F085
V(BR)DSS -500 volts
Unlock Full Specs
to access all available technical data