onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3N60CTM_WS FQD3N60CTM_WS

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 100036-FQD3N60CTM_WS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 565pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.4 Ohm @ 1.2A, 10V
Alternative Parts (Cross-Reference): STD2N62K3; NTD4N60; MDD4N60BRH;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 600V 2.4A DPAK Product overview: FQD3N60CTM_WS from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.4A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQD3N60CTM_WS can be used for catalog matching and distributor lookup.