onsemi Single FETs, MOSFETs FQD3N50CTM

Description
N-Channel 500V 2.5A (Tc) 35W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 500V 2.5A (Tc) 35W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD3N50CTM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD3N50CTM-ND
Single FETs, MOSFETs FQD3N50CTM-ND
N-Channel 500V 2.5A (Tc) 35W (Tc) Surface Mount TO-252AA

N-Channel 500V 2.5A (Tc) 35W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3N50CTM - 204291-FQD3N50CTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3N50CTM
204291-FQD3N50CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3N50CTM 204291-FQD3N50CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204291-FQD3N50CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 365pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.25A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204291-FQD3N50CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 365pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 1.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Singapore
500V 2.5A 2.1 Ohm DPAK MOSFET Transistor
278-FQD3N50CTM
500V 2.5A 2.1 Ohm DPAK MOSFET Transistor 278-FQD3N50CTM
500V N-CH MOSFET 2.5A, 2.1 Ohm, DPAK, SM Product overview: FQD3N50CTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 2.5A, 2.1 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.5A, 2.1 Ohm, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD3N50CTM can be used for catalog matching and distributor lookup.

500V N-CH MOSFET 2.5A, 2.1 Ohm, DPAK, SM Product overview: FQD3N50CTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 2.5A, 2.1 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.5A, 2.1 Ohm, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD3N50CTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD3N50CTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD3N50CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD3N50CTM
MOSFET N-CH 500V 2.5A DPAK

MOSFET N-CH 500V 2.5A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQD3N50CTM-ND 204291-FQD3N50CTM 278-FQD3N50CTM FQD3N50CTM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3N50CTM 500V 2.5A 2.1 Ohm DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 500 volts
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