onsemi Single FETs, MOSFETs FQD2N90TM

Description
N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD2N90TMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD2N90TMCT-ND
Single FETs, MOSFETs FQD2N90TMCT-ND
N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FQD2N90TMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD2N90TMDKR-ND
Single FETs, MOSFETs FQD2N90TMDKR-ND
N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FQD2N90TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD2N90TMTR-ND
Single FETs, MOSFETs FQD2N90TMTR-ND
N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
N-Channel 900V MOSFET Transistor
2088-FQD2N90TM
N-Channel 900V MOSFET Transistor 2088-FQD2N90TM
MOSFETs 900V N-Channel QFET Product overview: FQD2N90TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD2N90TM can be used for catalog matching and distributor lookup.

MOSFETs 900V N-Channel QFET Product overview: FQD2N90TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD2N90TM can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N90TM - 016434-FQD2N90TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N90TM
016434-FQD2N90TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N90TM 016434-FQD2N90TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016434-FQD2N90TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 7.2 Ohm @ 850mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016434-FQD2N90TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 7.2 Ohm @ 850mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Mosfet, N-Ch, 900V, 1.7A, To-252; Transistor Polarity Onsemi - 07AH3994 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 1.7A, To-252; Transistor Polarity Onsemi
07AH3994
Mosfet, N-Ch, 900V, 1.7A, To-252; Transistor Polarity Onsemi 07AH3994
MOSFET, N-CH, 900V, 1.7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):5.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 900V, 1.7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):5.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N90TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD2N90TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD2N90TM
MOSFET N-CH 900V 1.7A DPAK

MOSFET N-CH 900V 1.7A DPAK

Supplier's Site
Single FETs, MOSFETs - FQD2N90TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD2N90TM
Single FETs, MOSFETs FQD2N90TM
MOSFET N-CH 900V 1.7A DPAK

MOSFET N-CH 900V 1.7A DPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 900V N-Channel QFET

MOSFET 900V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQD2N90TMCT-ND 2088-FQD2N90TM 016434-FQD2N90TM 07AH3994 FQD2N90TM FQD2N90TM FQD2N90TM
Product Name Single FETs, MOSFETs N-Channel 900V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N90TM Mosfet, N-Ch, 900V, 1.7A, To-252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Reel SOT3; TO-252 (DPAK); D-Pak TO-3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET Operating Mode Enhancement
Transconductance 0.0017 kS
PD 2.5 milliwatts 2500 to 50000 milliwatts 2500 milliwatts
Unlock Full Specs
to access all available technical data