onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM FQD2N80TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016433-FQD2N80TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016433-FQD2N80TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM - 016433-FQD2N80TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM
016433-FQD2N80TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM 016433-FQD2N80TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016433-FQD2N80TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016433-FQD2N80TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD2N80TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD2N80TM
Single FETs, MOSFETs FQD2N80TM
MOSFET N-CH 800V 1.8A DPAK

MOSFET N-CH 800V 1.8A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD2N80TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD2N80TMTR-ND
Single FETs, MOSFETs FQD2N80TMTR-ND
N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
N-Channel 800V MOSFET Transistor
2088-FQD2N80TM
N-Channel 800V MOSFET Transistor 2088-FQD2N80TM
MOSFETs 800V N-Channel QFET Product overview: FQD2N80TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD2N80TM can be used for catalog matching and distributor lookup.

MOSFETs 800V N-Channel QFET Product overview: FQD2N80TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD2N80TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 800V N-Channel QFET

MOSFET 800V N-Channel QFET

Buy Now Datasheet
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi - 15R3446 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi
15R3446
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi 15R3446
N CHANNEL MOSFET, 800V, 1.8A; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 800V, 1.8A; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N80TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD2N80TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD2N80TM
MOSFET N-CH 800V 1.8A DPAK

MOSFET N-CH 800V 1.8A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016433-FQD2N80TM FQD2N80TM FQD2N80TMTR-ND 2088-FQD2N80TM FQD2N80TM 15R3446 FQD2N80TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 800V MOSFET Transistor MOSFET N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 2500 to 50000 milliwatts 2500 milliwatts 2.5 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Reel TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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