onsemi Single FETs, MOSFETs FQD2N80TM

Description
MOSFET N-CH 800V 1.8A DPAK
  • Single FETs, MOSFETs - FQD2N80TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM - 016433-FQD2N80TM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQD2N80TMTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N80TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi - 15R3446 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 800V 1.8A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD2N80TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD2N80TM
Single FETs, MOSFETs FQD2N80TM
MOSFET N-CH 800V 1.8A DPAK

MOSFET N-CH 800V 1.8A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM - 016433-FQD2N80TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM
016433-FQD2N80TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM 016433-FQD2N80TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016433-FQD2N80TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016433-FQD2N80TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD2N80TMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD2N80TMTR-ND
Single FETs, MOSFETs FQD2N80TMTR-ND
N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N80TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD2N80TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD2N80TM
MOSFET N-CH 800V 1.8A DPAK

MOSFET N-CH 800V 1.8A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQD2N80TM
MOSFET FQD2N80TM
MOSFET 800V N-Channel QFET

MOSFET 800V N-Channel QFET

Buy Now Datasheet
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi - 15R3446 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi
15R3446
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi 15R3446
N CHANNEL MOSFET, 800V, 1.8A; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 800V, 1.8A; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:-RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQD2N80TM 016433-FQD2N80TM FQD2N80TMTR-ND FQD2N80TM FQD2N80TM 15R3446
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts
IDSS 1800 milliamps 1800 milliamps
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