onsemi Single FETs, MOSFETs FQD2N80TM

Description
MOSFET N-CH 800V 1.8A DPAK
  • Single FETs, MOSFETs - FQD2N80TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQD2N80TMTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM - 016433-FQD2N80TM - Win Source Electronics
    Win Source Electronics
  • N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi - 15R3446 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N80TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 800V 1.8A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD2N80TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD2N80TM
Single FETs, MOSFETs FQD2N80TM
MOSFET N-CH 800V 1.8A DPAK

MOSFET N-CH 800V 1.8A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD2N80TMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD2N80TMTR-ND
Single FETs, MOSFETs FQD2N80TMTR-ND
N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM - 016433-FQD2N80TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM
016433-FQD2N80TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM 016433-FQD2N80TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016433-FQD2N80TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 550pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016433-FQD2N80TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.3 Ohm @ 900mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi - 15R3446 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi
15R3446
N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi 15R3446
N CHANNEL MOSFET, 800V, 1.8A; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 800V, 1.8A; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Product Range:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N80TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD2N80TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD2N80TM
MOSFET N-CH 800V 1.8A DPAK

MOSFET N-CH 800V 1.8A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQD2N80TM
MOSFET FQD2N80TM
MOSFET 800V N-Channel QFET

MOSFET 800V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQD2N80TM FQD2N80TMTR-ND 016433-FQD2N80TM 15R3446 FQD2N80TM FQD2N80TM
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N80TM N Channel Mosfet, 800V, 1.8A; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts
IDSS 1800 milliamps 1800 milliamps
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