Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016432-FQD2N60CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 950mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFETs N-CH/600V/2A/A.QFET Product overview: FQD2N60CTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD2N60CTM can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 1.9A DPAK
N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
MOSFET N-CH 600V 1.9A DPAK
MOSFET, N-CH, 600V, 1.9A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016432-FQD2N60CTM | 2088-FQD2N60CTM | FQD2N60CTM | FQD2N60CTMTR-ND | FQD2N60CTM | FQD2N60CTM | 31Y1527 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N60CTM | 600V 2A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 1.9A, To-252Aa-3; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 2500 to 44000 milliwatts | 2.5 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; TO-252 (DPAK); D-Pak | Reel | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
