onsemi Single FETs, MOSFETs FQD2N60CTM

MOSFET N-CH 600V 1.9A DPAK

N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA

N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA

N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA

MOSFETs N-CH/600V/2A/A.QFET Product overview: FQD2N60CTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD2N60CTM can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016432-FQD2N60CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 950mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500