onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N50TM FQD2N50TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 000480-FQD2N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 1.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5.3 Ohm @ 800mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 000480-FQD2N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 1.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5.3 Ohm @ 800mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N50TM - 000480-FQD2N50TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N50TM
000480-FQD2N50TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N50TM 000480-FQD2N50TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 000480-FQD2N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 1.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 230pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5.3 Ohm @ 800mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 000480-FQD2N50TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 1.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 230pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5.3 Ohm @ 800mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
500V 1.6A DPAK MOSFET Transistor
278-FQD2N50TM
500V 1.6A DPAK MOSFET Transistor 278-FQD2N50TM
MOSFET N-CH 500V 1.6A DPAK Product overview: FQD2N50TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 1.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 1.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD2N50TM can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 1.6A DPAK Product overview: FQD2N50TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 1.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 1.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD2N50TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD2N50TM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD2N50TM-ND
Single FETs, MOSFETs FQD2N50TM-ND
N-Channel 500V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252AA

N-Channel 500V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N50TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD2N50TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD2N50TM
MOSFET N-CH 500V 1.6A DPAK

MOSFET N-CH 500V 1.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 000480-FQD2N50TM 278-FQD2N50TM FQD2N50TM-ND FQD2N50TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N50TM 500V 1.6A DPAK MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 2500 to 30000 milliwatts 30000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

60V 120A MOSFET Transistor - 278-AUIRFS3306 - ERSAELECTRONICS PTE. LTD.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
PD 230000 milliwatts
View Details
5 suppliers