onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06TF FQD20N06TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039715-FQD20N06TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 16.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 590pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06TF - 1039715-FQD20N06TF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD20N06TF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039715-FQD20N06TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 16.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 590pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06TF - 1039715-FQD20N06TF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06TF
1039715-FQD20N06TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06TF 1039715-FQD20N06TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039715-FQD20N06TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 16.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 590pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039715-FQD20N06TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 16.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 590pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 63 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD20N06TF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD20N06TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD20N06TF
MOSFET N-CH 60V 16.8A DPAK

MOSFET N-CH 60V 16.8A DPAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039715-FQD20N06TF FQD20N06TF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06TF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 2500 to 38000 milliwatts
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