onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06LETM FQD20N06LETM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039713-FQD20N06LETM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039713-FQD20N06LETM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06LETM - 1039713-FQD20N06LETM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06LETM
1039713-FQD20N06LETM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06LETM 1039713-FQD20N06LETM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039713-FQD20N06LETM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 665pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039713-FQD20N06LETM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17.2A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 665pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FQD20N06LETM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD20N06LETM
Single FETs, MOSFETs FQD20N06LETM
MOSFET N-CH 60V 17.2A DPAK

MOSFET N-CH 60V 17.2A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD20N06LETM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD20N06LETM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD20N06LETM
MOSFET N-CH 60V 17.2A DPAK

MOSFET N-CH 60V 17.2A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039713-FQD20N06LETM FQD20N06LETM FQD20N06LETM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD20N06LETM Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 2500 to 38000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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