onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TM FQD19N10TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 101180-FQD19N10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 101180-FQD19N10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TM - 101180-FQD19N10TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TM
101180-FQD19N10TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TM 101180-FQD19N10TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 101180-FQD19N10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 101180-FQD19N10TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD19N10TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD19N10TM
Single FETs, MOSFETs FQD19N10TM
MOSFET N-CH 100V 15.6A DPAK

MOSFET N-CH 100V 15.6A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD19N10TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD19N10TMTR-ND
Single FETs, MOSFETs FQD19N10TMTR-ND
N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
N-Channel SMD 100V 15.6A MOSFET Transistor
278-FQD19N10TM
N-Channel SMD 100V 15.6A MOSFET Transistor 278-FQD19N10TM
N-Channel MOSFET, 100V, 15.6A, 100mR, DPAK, Surface Mount Product overview: FQD19N10TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 100V, 15.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 15.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD19N10TM can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 100V, 15.6A, 100mR, DPAK, Surface Mount Product overview: FQD19N10TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 100V, 15.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 15.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD19N10TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 100V N-Ch QFET Logic Level

MOSFET 100V N-Ch QFET Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD19N10TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD19N10TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD19N10TM
MOSFET N-CH 100V 15.6A DPAK

MOSFET N-CH 100V 15.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 101180-FQD19N10TM FQD19N10TM FQD19N10TMTR-ND 278-FQD19N10TM FQD19N10TM FQD19N10TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TM Single FETs, MOSFETs Single FETs, MOSFETs N-Channel SMD 100V 15.6A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 2500 to 50000 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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