onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TF FQD19N10TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039702-FQD19N10TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039702-FQD19N10TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TF - 1039702-FQD19N10TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TF
1039702-FQD19N10TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TF 1039702-FQD19N10TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039702-FQD19N10TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 780pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039702-FQD19N10TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 780pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
100V 15.6A DPAK MOSFET Transistor
278-FQD19N10TF
100V 15.6A DPAK MOSFET Transistor 278-FQD19N10TF
MOSFET N-CH 100V 15.6A DPAK Product overview: FQD19N10TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 15.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 15.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD19N10TF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 15.6A DPAK Product overview: FQD19N10TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 15.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 15.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD19N10TF can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD19N10TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD19N10TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD19N10TF
MOSFET N-CH 100V 15.6A DPAK

MOSFET N-CH 100V 15.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039702-FQD19N10TF 278-FQD19N10TF FQD19N10TF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10TF 100V 15.6A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 2500 to 50000 milliwatts 50000 milliwatts
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