MOSFET N-CH 100V 15.6A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204289-FQD19N10LTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 15.6A DPAK
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQD19N10LTF | 204289-FQD19N10LTF | FQD19N10LTF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10LTF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 100 volts | 100 volts | |
| IDSS | 15600 milliamps |
