onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD18N20V2TF FQD18N20V2TF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039701-FQD18N20V2TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): IRFR15N20DTRPBF; STD20N20T4; FQD18N20V2TF; FQD18N20V2; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039701-FQD18N20V2TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): IRFR15N20DTRPBF; STD20N20T4; FQD18N20V2TF; FQD18N20V2; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD18N20V2TF - 1039701-FQD18N20V2TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD18N20V2TF
1039701-FQD18N20V2TF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD18N20V2TF 1039701-FQD18N20V2TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039701-FQD18N20V2TF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): IRFR15N20DTRPBF; STD20N20T4; FQD18N20V2TF; FQD18N20V2; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039701-FQD18N20V2TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 140 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): IRFR15N20DTRPBF; STD20N20T4; FQD18N20V2TF; FQD18N20V2;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD18N20V2TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD18N20V2TF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD18N20V2TF
MOSFET N-CH 200V 15A DPAK

MOSFET N-CH 200V 15A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039701-FQD18N20V2TF FQD18N20V2TF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD18N20V2TF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 2500 to 83000 milliwatts
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